cmdd2004 surface mount high voltage silicon switching diode description: the central semiconductor cmdd2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a supermini? surface mount package, designed for applications requiring high voltage capability. marking code: c24 maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 250 v peak repetitive reverse voltage v rrm 300 v peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +175 c thermal resistance ja 600 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max unit i r v r =240v 100 na i r v r =240v, t a =150c 100 a bv r i r =100a 300 v v f i f =100ma 1.0 v c t v r =0, f=1.0mhz 5.0 pf t rr i f =i r =30ma, i rr =3.0ma, r l =100 50 ns sod-323 case r6 (24-june 2011) www.centralsemi.com
cmdd2004 surface mount high voltage silicon switching diode lead code: 1) cathode 2) anode marking code: c24 sod-323 case - mechanical outline www.centralsemi.com r6 (24-june 2011)
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